MDD-63-12

MDD-63-12 Power Diode Module

MDD-63-12 is a power diode module for power conversion and switching equipment. The complete designation identifies the 63 A current rating and the 1200 V repetitive-voltage class. The device is a general industrial power-semiconductor module; no aircraft applicability is claimed without an equipment drawing or approved parts list.

Internal circuit and operating principle

The internal circuit contains Two series-connected silicon diodes in a half-bridge circuit. This arrangement is used as a power rectifier arm and provides a compact insulated assembly for AC-to-DC conversion. For background on the semiconductor principle, see diode. The published operating-frequency limit is Up to 500 Hz / до 500 Гц, and the external circuit must follow the terminal diagram marked on the case or specified in the product passport.

MDD-63-12 electrical ratings

The principal catalogue ratings are 63 A average current and 1200 V repetitive voltage. The listed surge-current capability is 1.6 kA; the maximum forward-voltage value is ≤ 1.35 V. The maximum leakage-current value is ≤ 4.5 mA, while the junction-temperature range is −60 to +140 °C. These are selection limits, not permission to operate without thermal calculation and the applicable technical documentation.

Housing, cooling and installation

The module uses the MTD1 case and measures 92 × 20 × 30 mm with a mass of ≤ 200 g. Natural or forced-air cooling may be used with compatible heat sinks O24, O34, O55, O56, O57, O58. The mounting surface must be flat and clean, and the terminal hardware must be tightened to the value stated in the passport. The published ambient range is −60 to +50 °C.

Identification and selection

Match the full MDD-63-12 marking, circuit symbol, terminal layout, voltage class, current rating and housing size. Similar MDD, MTT and MTOTO devices are not interchangeable merely because their case dimensions are alike. Confirm the cooling arrangement and technical conditions before installation. Related products are grouped in Electronic Modules.

Product Type: Power Diode Module
Primary Designation: MDD-63-12
Original Cyrillic Designation: МДД-63-12
Internal Circuit: Two series-connected silicon diodes in a half-bridge circuit
Operating Frequency: Up to 500 Hz
Average Current Rating: 63 A
Repetitive Voltage Rating: 1200 V
Maximum Leakage Current: ≤ 4.5 mA
Surge Current: 1.6 kA
Slope Resistance: ≤ 2.7 mΩ
Maximum RMS Forward Current: 100 A
Maximum Forward/On-State Voltage: ≤ 1.35 V
Threshold Voltage: ≤ 0.95 V
I²t Rating: ≤ 12.8 kA²s
Reverse Recovery Charge: ≤ 230 µC
Isolation Test Voltage: 3600/3000 V
Junction-to-Case Thermal Resistance: ≤ 0.23 °C/W
Junction Temperature: −60 to +140 °C
Ambient Temperature: −60 to +50 °C
Housing: MTD1
Compatible Heat Sinks: O24, O34, O55, O56, O57, O58
Dimensions: 92 × 20 × 30 mm
Mass: ≤ 200 g
Climatic Version: UHL4 / УХЛ4
Technical Conditions: TU16-2006 IEAL.435740.007 TU
Alternative Designations: MDD-63-12; MDD6312; МДД-63-12; МДД6312

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Warranty
All products are covered by a standard 6-month warranty.
Extended warranty is available upon request and is agreed individually; it may affect the final product price.